hutton close, crowther ind est, washington, tyne & wear ne38 0ah, england mailto:sales@isocom.uk.com - tel: +44 (0)191 4166546 - fax: +44 (0)191 4155055 circuit features description absolute maximum ratings electrical characteristics similar optocouplers home page mct6, mct61, mct62, MCT66 optically coupled isolators circuit features 2500 v isolation. choice of 4 current transfer ratios. low cost dual-in-line package. two packages fit into a 16 lead dip socket. description the mct6, mct62, mct61 and MCT66 optoisolators have two channels for high density applications. for four channel applications, two-packages fit into a standard 16 pin dip socket. each channel is an npn silicon planar phototransistor optically coupled to a gallium arsenide infrared emitting diode. surface mount option available. all electrical parameters are 100% tested by manufacturing. specifications are guaranteed to a cumulative 0.65% aql.
absolute maximum ratings (ta=25c) storage temperature: operating temperature: lead soldering: input-to-output isolation voltage: -55c to +150c -55c to +100c 250c for 10s, 1.6mm from case 2500vdc ( note 1 ) input diode (each channel) forward dc current: reverse dc voltage: peak forward current: power dissipation: derate linearly: 60ma 3v 3a (1 s pulse, 300pps) 100mw 1.33mw/c above 25c output transistor collector current: power dissipation: derate linearly: 30ma 150mw 2.00mw/c above 25c coupled input to output breakdown voltage: total package power dissipation: derate linearly: 2500vrms 400mw 5.33mw/c above 25c electro-optical characteristics (ta=25c) input diode parameter conditions min typ max unit v f rated forward voltage i f =20ma 1.25 1.5 v v r forward current i r =10 a 3 25 v i r reverse current v r =3.0v 0.001 10 a c j junction capacitance v f =0v 50 pf output transistor (i f =0) bv ceo collector-emitter voltage i c =1ma 30 35 v bv eco emitter-collector voltage i e =100 a 6 13 v i ceo leakage current, collector-emitter v ce =10v 5 100 na c ce capacitance collector-emitter v ce =0v 8 pf coupled i c /i f dc current transfer ratio mct6 v ce =10v, i f =10ma 20 % MCT66 6 %
mct61 v ce =5v, i f =5ma 50 % mct62 100 % v ce(sat) collector-emitter saturation voltage mct6, 61, 62 i c =2ma, i f =16ma 0.2 0.4 v MCT66 i c =2ma, i f =40ma 0.2 0.4 v switching times non-saturated rise time, fall time i c =2ma, v ce =10v, 2.4 s (note 2) r l =100ohm non-saturated rise time, fall time i c =2ma, v ce =10v, 15 s (note 2) r l =1kohm saturated turn-on time(5v - 0.8v) r l =2kohm, i f =40ma 5 s saturated turn-off time (from saturation to 2.0v) r l =2kohm, i f =40ma 25 s b w bandwidth i c =2ma, v cc =10v, 150 khz r l =100ohm isolation characreristics bv i-o isolation voltage t=1 min 2500 vrms r i-o isolation resistance, mct6x v i-o =500vdc 1e11 ohm breakdown voltage channel-to-channel mct6x relative humidity=40%, f=1mhz 500 vdc capacitance between channels 0.4 pf notes 1. 2. the frequency at which i c is 3db down from the 1khz value. isocom takes great effort to ensure accurate data, but regrettably cannot be held liable for any error on its website. visit file lists to confirm old printouts are up-to-date. contents
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